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Influence of V/III flux ratio on electrical properties of AlInGaN/Gan heterostructures grown by MOCV
  • ISSN号：0022-0248
  • 期刊名称：Journal of Crystal Growth
  • 时间：0
  • 页码：211-214
  • 语言：英文
  • 相关项目：GaN基异质结构的光学偏振问题及其控制
作者： Zhang, Guoyi|Yu, Tongjun|Xu, Ke|Pan, Yaobo|Yang, Zhijian|
同期刊论文项目
GaN基异质结构的光学偏振问题及其控制
期刊论文 39 会议论文 6 专利 4
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