中文摘要：

采用半导体光刻技术在硅衬底上获得图形化掩膜，然后用热化学气相淀积（T-CVD）的方法制备了图形化的碳纳米管线阵列，用扫描电镜和拉曼光谱仪对碳纳米管进行了表征。研究了图形化碳纳米管线阵列的场发射特性，并与无图形化处理的碳纳米管薄膜样品的场发射特性进行了比较。当发射电流密度达到10gA／cm^2时，无图形化处理的碳纳米管薄膜、10μm碳纳米管线阵列以及2μm碳纳米管线阵列样品的开启电场分别为3V／μm、2．1V／μm和1．7V／μm；而当电场强度达3．67 V／μm时，相应的电流密度分别为2．57mA／cm^2、4．65mA／cm^2和7．87mA／cm^.实验结果表明，图形化处理后的碳纳米管作为场发射体，其场发射特性得到了明显的改善。对改善的原因进行了分析和讨论。

英文摘要：

Using standard photolithography, patterned carbon nanotube line arrays were fabricated con substrates by thermal chemical vapor deposition. Scanning electron microscopy and Raman spec- troscopy were used to characterize the structure of the carbon nanotubes. The carbon nanotubes were very uniform and about 50 nm in diameter and 2 μm in length. The Raman spectrum showed that the carbon nanotubes were multi-walled carbon nanotubes. Field emission characteristics of the samples were characterized. It was found that the non-patterned carbon nanotube films, 10 μm and 2 μm size carbon nanotube line arrays field emission characteristics were gradually improved with turn-on field of 3 V/μm,2.1 V/μm, 1.7 V/μm and emission current density at applied electric field 3.67 V/m were 2.57 mA/cm^2 ,4. 65 mA/cm^2 , 7. 87 mA/cm^2 , respectively. The reasons may attribute to the fieldscreening effect and edge effect by analyzing the experimental results.