位置：成果数据库 > 期刊 > 期刊详情页
Transparent amorphous Indium-Gallium-Zinc-Oxygen thin film transistors using solution technology at
  • ISSN号：0928-0707
  • 期刊名称：Journal of Sol-Gel Science and Technology
  • 时间：2013.6.6
  • 页码：497-503
  • 相关项目：用于驱动OLED的梯度微晶化微晶硅薄膜及其TFT特性研究
作者： Li, Xifeng|Li, Qian|Zhang, Jianhua|
同期刊论文项目
用于驱动OLED的梯度微晶化微晶硅薄膜及其TFT特性研究
期刊论文 16 会议论文 3 专利 3
同项目期刊论文
Influence of plasma treatment on optical and electrical properties of a-InGaZnO films
Stability of low temperature and transparent amorphous InGaZnO thin film transistor under illuminati
Microstructure, optical and electrical properties of gallium-doped ZnO films prepared by sol-gel met
Sol-gel processed indium zinc oxide thin film and transparent thin-film transistors
Dependence of annealing on stability of transparent amorphous InGaZnO thin film transistor
溶胶凝胶法制备透明IZO薄膜晶体管
17.8cm彩色AMOLED驱动模块的研制
射频磁控溅射低温制备非晶铟镓锌氧薄膜晶体管
Effect of etching stop layer on characteristics of amorphous IGZO thin film transistor fabricated at
Low-Temperature Solution-Processed Zirconium Oxide Gate Insulators for Thin-Film Transistors
溶胶-凝胶法制备透明氧化物薄膜晶体管的研究进展
热处理气氛对溶胶-凝胶法制备a-InGaZnO TFT器件的影响
低温透明非晶IGZO薄膜晶体管的光照稳定性
溶胶凝胶法制备高性能锆铝氧化物作为绝缘层的薄膜晶体管
Fine-tuning the thicknesses of organic layers to realize high-efficiency and long-lifetime blue organic light-emitting diodes