中文摘要：

采用溶胶-凝胶法在SiO2/Si衬底上制备了LaNiO3薄膜,并通过改变退火温度和薄膜厚度对其微结构和电学性能进行了表征测试。X射线衍射（XRD）和电阻率测试结果表明,随着退火温度和厚度的增加,LaNiO3薄膜的结晶质量明显提高,薄膜电阻率也逐渐下降。当退火温度为800℃时,厚度为630nm的LaNiO3薄膜电阻率最小,达到了1.37mΩ·cm。此外,利用LaNiO3薄膜作为下电极制备的2%Nb-Pb（Zr0.6Ti0.4）O3薄膜呈良好的钙钛矿相结构,且经过1010铁电循环测试周期以后,2%Nb-Pb（Zr0.6Ti0.4）O3薄膜的铁电性能未出现明显下降,表明该LaNiO3薄膜是生长PNZT铁电薄膜的优良下电极材料。

英文摘要：

LaNiO3 thin films were successfully prepared on SiO2/ Si substrates by sol-gel method. The effects of annealing temperature and film thickness on the microstructures and electrical properties of LaNiO3 films were discussed. The results show that the crystallization of LaNiO3 thin film is improved obviously and the resistivity decreases as the annealing temperature and the thickness increasing. When the annealing temperature is 800 ℃,the resistivity of LaNiO3 thin film with thickness of 630 nm is 1. 37mΩ·cm. Furthermore,2% Nb-Pb（ Zr0. 6Ti0. 4） O3（ PNZT） thin film,deposited on LaNiO3 thin film as bottom electrode,shows good perovskite structure and the ferroelectric fatigue properties of PNZT film does not degenerate significantly after 1010 switching cycles. It indicates that LaNiO3 thin film is an excellent bottom electrode material for growing high quality PNZT ferroelectric thin film.