中文摘要：

使用Bridgman法生长的PbTe0.92Se0.08材料在硅衬底上沉积硒碲铅薄膜,采用X射线衍射（XRD）、电子扫描显微术（SEM）、能量散射X射线分析（EDAX）对薄膜的结构、表面形貌和化学配比进行了分析.结果表明,沉积的硒碲铅薄膜为多晶结构,具有明显的择优取向,晶粒为矩形.衬底温度对硒碲铅薄膜的红外光学性能有明显的影响,薄膜的折射率在5.2到5.8之间,消光系数均小于0.1,在波长大于6μm的红外光谱范围,一定衬底温度沉积的薄膜消光系数具有10^-3量级.研究表明,硒碲铅材料在红外光学薄膜领域具有应用前景.

英文摘要：

Thin-films of lead tellurium selenide were evaporated on silicon substrates from a resource of PbTe0.92Se0.08 bulk crystal grown by Bridgman method.X-ray diffraction（XRD）,scanning electron microscope（SEM）,and energy-dispersive analysis by X-ray（EDAX） were used to characterize the structural and surface morphological properties,as well as chemical compositions of the thin-films.The results indicate that thin-films of lead tellurium selenide have a polycrystalline structure and a preferred orientation during the deposition.It was also revealed that the grains appear as rectangles.By comparison of the optical properties of the thin-films deposited at different substrate-temperatures,it was found that substrate temperature has an important effect on the infrared optical properties of thin-films.The refractive index of the lead tellurium selenide thin-films lies between 5.2 and 5.8,and the extinction coefficient is lower than 0.1.When the wavelength is greater than 6μm,the extinction coefficient of the thin-films is as less as 10^-3.It can be inferred that lead tellurium selenide is a potential material to be used in the infrared coatings.