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Feature Profile Evolution During Etching of SiO2 in Radio-Frequency or Direct-Current Plasmas
  • ISSN号：1009-0630
  • 期刊名称：Plasma Science and Technology
  • 时间：0
  • 页码：64-70
  • 相关项目：反应离子刻蚀微观不均匀性的跨尺度研究
作者： Zhao Zhanqiang|Dai Zhongling|Wang Younian|
同期刊论文项目
反应离子刻蚀微观不均匀性的跨尺度研究
期刊论文 13 会议论文 5
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Simulations of Ion Behaviors in a Photoresist Trench During Plasma Etching Driven by a Radio-Frequen
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Study of Characteristics of the Radio-Frequency Sheath over a Substrate with a Circular Trench
Simulation of low-frequency power’s effects on dual frequency capacitive sheath near a concave
Study on feature profile evolution for chlorine etching of silicon in an RF biased sheath
Feature Profile Evolution During Etching of SiO2 in Radio-Frequency or Direct-Current Plasmas
Simulations of Ion Behaviors in a Photoresist Trench During Plasma Etching Driven by a Radio-Frequency Source
Study of Characteristics of the Radio-Frequency Sheath over a Substrate with a Circular Trench
Characteristics of a Collisional Sheath Biased by a Dual Frequency Source
期刊信息
  • 《等离子体科学与技术：英文版》
  • 主管单位:中国科学院 中国科协
  • 主办单位:中国科学院等离子体物理研究所 中国力学学会
  • 主编：万元熙、谢纪康
  • 地址：合肥市1126信箱
  • 邮编：230031
  • 邮箱：pst@ipp.ac.cn
  • 电话：0551-5591617 5591388
  • 国际标准刊号：ISSN：1009-0630
  • 国内统一刊号：ISSN：34-1187/TL
  • 邮发代号:
  • 获奖情况:
  • 国内外数据库收录:
  • 美国化学文摘（网络版）,荷兰文摘与引文数据库,美国工程索引,美国剑桥科学文摘,美国科学引文索引（扩展库）,英国科学文摘数据库
  • 被引量:89