中文摘要：

针对带隙基准的精度会影响集成电路的性能问题，提出了一种新的带隙基准电路结构．通过采用负反馈补偿网络来增强电源抑制比，降低失调电压，从而提高了电路的稳定性和精度．基于SMIC0．18μm1．8VCMOS工艺，利用Cadencespectre仿真，结果表明：在-30℃～100℃温度范围内，温漂系数为34．6X10-6／℃；低频下电源抑制比为-63．5dB；功耗仅1．5μW．该电路适用于低压低功耗能量获取系统．

英文摘要：

Based on the problem that the accuracy of the bandgap affects the performance of the integrated circuit, a novel BGR （bandgap voltage reference） is proposed. It utilizes a feedback compensation network to enhance PSRR and reduce the offset voltage, which improves the system stability and precision. Cadence spectre simulation has been done by the SMIC 0.18 9m 1.8 V CMOS process for validation. The results show that the achieved temperature coefficient is 34.6）〈 10-6/℃ over --30℃ to 100℃and that the PSRR is --63.5 dB at a low frequency. The power assumption is only 1.5/xW. The circuit is suitable for a low- voltage low-power energy harvesting system.