中文摘要：

采用提拉法生长了白光发光二极管（LED）用Ce,Mn： YAG单晶, 通过X射线衍射（XRD）测试、 X射线吸收精细结构（XAFS）测试、 吸收光谱和激发发射光谱对其晶相结构、 掺杂Mn的价态和光谱特性进行了表征, 并研究了晶片厚度及驱动电流的变化对LED器件光电性能的影响. 在460 nm蓝光的激发下, Ce,Mn： YAG单晶的发射光谱可由中心波长526和566 nm的宽带发射峰复合而成. XAFS测试结果表明, 所得单晶中掺杂Mn的价态以正二价为主. 由于Ce^3＋和Mn^2＋在YAG单晶中存在能量传递, 荧光光谱中566 nm处的橙色发射峰对应于Mn^2＋离子^4T1→^6A1能级的辐射跃迁.

英文摘要：

Ce,Mn： YAG single crystal for white light emitting diode（LED） was grown by Czochralski method. The structure, valence states of doped Mn and optical properties of the samples were characterized by X-ray diffraction（XRD）, X-ray absorption fine structure（XAFS）, absorption and photoluminescence spectra. The photoelectric parameters of white LED were also measured by changing the thickness of single crystal and the driving current. Ce,Mn： YAG single crystal shows a broad emission band peak around 526 nm and 566 nm under blue light of 460 nm. The XAFS result shows that the valence states of doped Mn are mostly Mn^2＋ in the Ce,Mn： YAG. Due to the effective energy transfer between Ce^3＋ and Mn^2＋ in YAG single crystal, the bright orange luminescence in the bands peaked at 566 nm are caused by the ^4T1→^6A1 radiative transitions of Mn^2＋.