以往提出的半导体薄膜晶体管的节能设计方法,受到半导体薄膜晶体管不易受控缺陷的影响,节能效果不佳,故提出一种性能更为优异的半导体薄膜晶体管的节能设计方法。概述了半导体薄膜晶体管中电源回路和驱动电路的节能设计原理,并给出终端设备架构设计方案。使用电源回路控制半导体薄膜晶体管供电频率,实现基本节能。利用驱动电路进一步调节电能损耗、管理电源回路的电流谐波,改善半导体薄膜晶体管的开关性能。并以构建模型的方式对电路噪音进行消除,优化储能水平。经实验验证可得,所提方法下的半导体薄膜晶体管拥有优良的开关性能和储能水平,并且节能效果较好。
The previously?proposed energy?saving design method of the semiconductor thin?film transistor has poor energysaving effect because the semiconductor thin?film transistor is not easy to control,so a superior energy?saving design method of semiconductor thin?film transistor is put forward.The energy?saving design principles of the power loop and drive circuit in semiconductor thin?film transistor are summarized.The architecture design scheme of the terminal device is given.The power loop is used to control the power?supply frequency of the semiconductor thin?film transistor to realize the basic energy saving.The drive circuit is adopted to regulate the electric energy loss further,manage the current harmonic of the power loop,and improve the switching performance of the semiconductor thin?film transistor.The mode of model construction is employed to eliminate the circuit noise,and optimize the energy storage performance.The experimental verification results show that the method makes the semiconductor thin?film transistor have high switching performance,high energy storage level,and superior energy?saving effect.