中文摘要：

利用反应射频磁控溅射技术,首次利用氧化铜作为溅射靶,在氮气和氩气的混合气氛下,制备出N掺杂的Cu2O薄膜。通过改变沉积温度,研究了氮掺杂Cu2O薄膜的结构特征和生长模式以及光学特性。研究结果表明低温沉积时,薄膜表现为比较强的（100）织构;随着沉积温度增加到500℃,薄膜逐渐转变为（111）织构,沉积温度增加导致的临界成核自由能的增加是决定薄膜织构特征的重要因素;原子力显微镜分析发现不同沉积温度的薄膜表面形貌的空间标度指数α〉1,属于表面扩散支配的薄膜生长机制;薄膜表面形貌的空间标度指数和关联长度随沉积温度的变化与薄膜织构度之间存在明显的关联;不同温度沉积的氮掺杂Cu2O薄膜的禁带宽度为（2.52±0.03）eV。

英文摘要：

N-doped Cu2O films were firstly deposited in the mixture of Ar and N2 by using reactive-frequency magnetron sputtering a CuO target.We have investigated the feature of structure,growth mechanism and optical properties of N-doped Cu2O films at different deposition temperatures.It is found that the Cu2O samples are highly（100） textured at the low deposition temperatures,and gradually change to be highly（111） textured at the deposition temperature of 500℃.With increasing the deposition temperature,the increase of free energy of critical nucleation is suggested to dominate the change of film texture.The analysis of the atomic force microscopy shows that the surface morphologies of all the films deposited at different temperatures have the spatial scaling exponents greater than 1（α1）,indicating that the film growth can be attributed to the surface-diffusion-dominated growth.The spatial scaling exponent and characteristic length of the film surface morphologies are found to correlate to the textured factors of the films.The bandgaps of N-doped Cu2O films deposited at different temperatures are determined to be（2.52±0.03）eV.