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Resistive switching characteristics of thin NiO film based flexible nonvolatile memory devices
  • ISSN号：0167-9317
  • 期刊名称：Microelectronic Engineering
  • 时间：2011.9.22
  • 页码：144-146
  • 相关项目：离子束辅助磁控溅射沉积共掺杂ZnO:TMLi薄膜及其多铁性研究
作者： H. J. Wang|C. W. Zou|D. J. Fu|
同期刊论文项目
离子束辅助磁控溅射沉积共掺杂ZnO:TMLi薄膜及其多铁性研究
期刊论文 15
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