中文摘要：

基于石墨烯优异的电学性能,其已被广泛应用于许多工业领域.但由于其带隙为零,一定程度上限制了在电子器件方面更进一步的应用.为了通过离子辐照在石墨烯中引入缺陷并打开带隙,本工作研究了能量为750 keV,1 MeV的质子束对硅衬底单层石墨烯的辐照损伤效应.通过对比辐照前后的石墨烯样品的拉曼光谱发现：I_D/I_G随着入射质子能损的增大而增大,与SRIM程序模拟结果趋势一致;缺陷间平均距离L_D随入射质子能量的增大而增大;缺陷密度n_D随入射质子能量的增大而减小.这表明质子在石墨烯中的损伤效应与三维材料相似.

英文摘要：

Graphene was first discovered in 2004（Novoselov K S,et al.2004 Science 306 666）,it is a single atomic layer of sp~2-bonded carbon atoms arranged in a honeycomb-like lattice.According to its extraordinary electronic,mechanical,thermal and optical properties,one can expect it to have a variety of applications in nanoscale electronics,composite materials,energy storage,and biomedicine fields.Although many experimental and theoretical studies on graphene have been carried,there still exist many obstacles to its applications.A representative example is nanoscale electronics（e.g.,field-effect transistors and optoelectronic devices） that requires non-zero band-gap.Therefore,introducing defects into graphene and leading to band-gap opening are key steps for its technique applications.Recently,ion beam irradiation as a defects introducing technique was performed by Lee et al.（2015 Appl.Surf.Sci.344 52） and Zeng et al.（2016 Carbon 100 16） through 5,10,and 15 MeV protons and highly charged ions（HCIs） irradiating the graphene separately.Considering the advantages of simplity for preparing samples and feasibility in atmospheric condition of Raman spectroscopy compared with common characterization techniques（high resolution transmission electron microscopy,scanning electron microscopy,atomic force microscopy） for nano-materials,in both studies,Raman spectroscopy is used to obtain the evolution of I_d/I_g（I_d is the peak intensity excited by defects,I_G is the peak intensity origining from lateral vibration of carbon atoms） with different energies and fluences,respectively.In this work,considered are the following points：1） the absence of quantitive characterization for defects in the above two studies;2） the low displacement energy of 25 eV required for a carbon atom to be knocked out（Zhao S J,et al.2012 Nanotechnology 23 285703）;3） the complex interaction between HCIs and material.The irradiation effects of single layer graphene on silicon substrate are investigated by 750 keV and 1 MeV