中文摘要：

阻变型电存储依靠外加电场作用下存储介质的导电性高低差异，即电学双稳态或多稳态来实现数据存取，并具有高容量、高柔韧性、低成本、低能耗、可规模化等优点，为下一代高密度存储技术提供新前景．除了无机氧化物、碳纳米材料、有机小分子和有机聚合物半导体材料之外，近年来，过渡金属配合物在阻变型电存储方面的应用也引起广泛关注．本文对迄今为止报道的大部分基于过渡金属配合物的阻变存储材料进行了总结和讨论，主要包括第VIII族金属【包括Fe（II）、Ru（II）、Co（III）、Rh（III）、Ir（III）、Pt（II）等配合物]、第IB族和IIB族金属[Cu（II）、Au（III）、Zn（11）等配合物]和镧系过渡金属配合物[Eu（III）及其它]，并对各种配合物的存储行为和存储机理进行了探讨．过渡金属配合物具有清晰可逆的氧化还原过程，通过改变配体的结构和金属的种类可以很方便地调节材料的前线轨道能级和能隙，利于形成电学双稳态或多稳态．达到二进制或多进制存储的目的．具有潜在应用价佰．

英文摘要：

A resistive memory operates as an electrical switch between high and low conductivity states （or multistates） in response to an external electric field. Due to the high capacity, high flexibility, good scalability, low cost, and low power consumption, resistive memory is promising for the next-generation high-density data storage. In addition to inorganic metal oxides, carbon nanomaterials, organic small molecular and polymeric semiconductor materials, transition-metal complexes have recently received much attention as active materials for resistive memory. In this contribution, the applications of transi- tion-metal complexes in resistive memory reported to date are summarized and discussed, mainly including group VIII [Fe（II）, Ru（II）, Co（III）, Rh（III）, Ir（III）, and Pt（II） complexes], group IB and IIB [Cu（II）, Au（III）, and Zn（II） complexes], and lanthanide complexes [mainly Eu（III） complexes]. The memory behavior and mechanism of these materials will be discussed. Transition-metal complexes often possess well-defined and reversible redox processes. The frontier energy levels and gaps can be easily modulated by changing the structures of ligands and metal species, which is beneficial for generating electrical bistates or multistates when they are used in resistive memory devices. These features make transition-metal complexes po- tentially useful as memory materials in practical applications.