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中文摘要：
提出了发射极非均匀指间距技术以增强多发射极指SiGe HBT在不同环境温度下的热稳定性。通过建立热电反馈模型对采用发射极非均匀指间距技术的SiGe HBT进行热稳定性分析,得到多发射极指上的温度分布。结果表明,与传统的均匀发射极指间距SiGe HBT相比,在相同的环境温度及耗散功率下,采用发射极非均匀指间距技术的SiGe HBT,其最高结温明显降低,热阻显著减小,温度分布更加均匀,有效地提高了多发射极指功率SiGe HBT在不同环境温度下的热稳定性。
英文摘要：
A novel multi-finger power SiGe heterojunction bipolar transistor（HBT）with non-uniform finger spacing structure was proposed to improve the thermal stability under different ambient temperatures.The thermal simulation for a power SiGe HBT with a novel structure was achieved with a numerical electro-thermal model.The temperature distribution on emitter fingers was obtained.Compared with the traditional structure,the maximum junction temperature,temperature distribution and thermal resistance are significantly improved.The thermal stability is effective enhanced under different ambient temperatures.
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