中文摘要：

利用水溶液提拉法，把籽晶放在育晶器的底部，沿（110）方向进行提拉生长．生长出了截面较大的KDP单晶12mm×12mm×31mm。（110）方向的生长速度较传统的溶液降温法得到了一定的提高。这主要是由于提拉使得晶体在提拉方向上的溶质边界层梯度持续发生变化造成的。

英文摘要：

KDP single crystal with overall dimension 12 mm× 12 mm× 31 mm and relatively large cross section were grown at the bottom of crystal growth device using aqueous solution pulling method. The growth rate along （ 110） direction were improved compared with that in the traditional aqueous solution cooling method. It is mainly be- cause of continuous change of the concentration gradient in the solute boundary layer.