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Influence of GeSi interfacial layer on Ge-Ge optical phonon mode in SiO(2) films embedded with Ge na
  • ISSN号：0003-6951
  • 期刊名称：Applied Physics Letters
  • 时间：0
  • 页码：171105-1-171105-3
  • 语言：英文
  • 相关项目：3C-SiC纳米复合结构的构建及其电子态和发光特性研究
作者： Li, T. H.|Gao, F.|Wu, X. L.|Chu, Paul K.|Liu, L. Z.|
同期刊论文项目
3C-SiC纳米复合结构的构建及其电子态和发光特性研究
期刊论文 21
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