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Ternary mixed crystal effect on electron mobility in a strained wurtzite AlN/GaN/AlN quantum well wi
  • ISSN号：0021-8979
  • 期刊名称：Journal of Applied Physics
  • 时间：0
  • 页码：1-7
  • 相关项目：应变及压力调制下半导体多层异质结构材料中的电子态
作者： Qu, Y.|Ban, S. L.|
同期刊论文项目
应变及压力调制下半导体多层异质结构材料中的电子态
期刊论文 22 会议论文 1
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