欢迎您！东篱公司
退出
-
申报数据库
-
立项数据库
-
成果数据库
-
项目获奖数据库
中文摘要：
利用直流磁控溅射工艺和掩膜技术研制出新型NiFe／Ag／NiFe全金属自旋晶体管试样。该薄膜磁阻系数AR／R≥9％，全金属自旋晶体管试样集电极电流变化Mc〉587％（常温），且其性能随基极Ag层厚度减小而增强。全金属自旋晶体管具有电流放大、存贮及逻辑电路等功能，有望替代现有的晶体管而应用于半导体大规模集成电路。
英文摘要：
The mechanism of metal spin nanometer node transistor has been investigated in this paper. New kinds of NiFe/Ag/NiFe/ thin film material of metal spin transistor also have been manufactured and analyzed. It＇s coefficient of magneto-resistance is AR/R≥9%, the coefficient of collector current amplify is Mc 〉587% （in room temperature）. The properties of spin transistor increase as the base thickness decreasing. Spin transistor is as the same common transistor, which can be used IC electronic circuit in the future.
同期刊论文项目
同项目期刊论文
期刊信息
位置：