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中文摘要：
采用溶胶．凝胶工艺，以TbCl3作为掺杂剂，在无规取向的ITO透明导电玻璃基板上成功地制备了高度择优取向的PbTiO3（PT）铁电薄膜。通过对不同前驱溶液浓度、热处理工艺、热处理时间和温度制备的PT薄膜样品的XRD图谱进行分析，得出了较为优化的制备工艺，并在此基础上溅射沉积出具有明显择优取向特征的PST薄膜。很明显，以取向PT作为诱导层，可以得到择优取向的PST薄膜材料。
英文摘要：
TbCl3 doped PbTiO3 （PT） thin films were successfully prepared on ITO/glass substrate by sol-gel method with high preferred orientation. Through analyzing the XRD patterns of PT thin films fabricated with different precursor solutions, heat treatment processing, annealing time and temperature, an optimized process was attained. And on the basis of oriented PT layer, PST thin films with preferred orientation were prepared by sputtering. The experimental result revealed that PST thin films with preferred orientation could be prepared by random oriented ITO/glass substrate with oriented PT as a seed layer.
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