采用简单的方法制备了铟掺杂硫化镉(In-doped-Cd S)半导体量子点,并将其作为敏化剂应用到量子点敏化太阳电池中。实验结果表明,In-doped-Cd S相对未掺杂Cd S的导带有所提高,光吸收发生红移,太阳能电池的短路电流、开路电压和光电转换效率均有所改善,当Indoped-Cd S的掺杂比例为1∶5,沉积次数为4次时达到最优,电池的光电转换效率达到了最大值(0.62%)。
A simple method is used in preparing In-doped-CdS Semiconductor quantum dots, which is employed as sensitizer in Quantum Dots-sensitized Solar Cells (QDSC). The experimental result shows the conduction band of In-doped-CdS has increased, compared with the undoped CdS; the optical absorption red-shift happens; the short circuit current, open circuit voltage and photovohaic conversion efficiency are improved. The photoelectric conversion efficiency achieves the maximum value (0.62%) with In-doped-CdS QDSC under the doping ratio of 1 : 5 and deposition cycles of 4.