中文摘要：

文章介绍了能谷电子学背后的基本物理原理,并回顾了此方向在材料实现上的进展。在理论背景部分简单回顾了基本模型和有关贝里曲率导致量子输运和光选择的重要概念,在材料实现部分除了总结在真实材料中重要的实验和理论的发现,也讨论了在这些材料中的自旋轨道耦合和近邻诱导的塞曼效应,最后展望了能谷电子学的发展前景。

英文摘要：

We review the basic physical principles behind valleytronics and the fabrication of recent materials in this field. The theoretical background includes the basic model and the key concepts related to Berry- curvature- induced quantum transport and optical selectivity. We then summarize the major findings, both computational and experimental, in this regard in real material systems. The effects of the spin-orbit coupling and proximity-induced Zeeman effect in these materials are also discussed. We conclude with an overview of future developments of valleytronics.