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中文摘要：
设计了一种工作在恒电压模式的、微热板结构的单片集成电阻真空传感器芯片.提出了一种以CMOS集成电路中的介质层与钝化层为结构层、栅多晶硅为牺牲层、第二层多晶硅为加热电阻的微传感器单芯片集成工艺模式,制定了相应的工艺流程.采用0.6μm CMOS数模混合集成电路工艺,结合牺牲层腐蚀技术实现了单片集成真空传感器的加工,测试结果显示该芯片能够测量2～10^5Pa范围内的气压大小,且输出电压范围可调,验证了单片集成工艺的可行性.
英文摘要：
The monolithic integrated micro sensor is an important direction in the fields of integrated circuits and micro sensors. In this paper,a monolithic thermal vacuum sensor based on a micro-hotplate （MHP） and operating under constant bias voltage conditions was designed. A new monolithic integrating mode was proposed,in which the dielectric and passiva- tion layers in standard CMOS processes were used as sensor structure layers,gate polysilicon as the sacrificial layer,and the second polysilicon layer as the sensor heating resistor. Then, the fabricating processes were designed and the monolithic thermal vacuum sensor was fabricated with a 0. 6μm mixed signal CMOS process followed by sacrificial layer etching technology. The measurement results show that the fabricated monolithic vacuum sensor can measure the pressure range of 2- 10^5 Pa and the output voltage is adjustable.
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