中文摘要：

利用等离子体刻蚀理论和实验相结合的方法，实现了离子刻蚀无驱动结构硅微机械陀螺芯片技术。实验表明：离子刻蚀55μm硅的均匀性U=0．63％，选择比P=90：1，刻蚀速率y=7．25μm／min，侧壁垂直度为90°±1°。应用该技术刻蚀出的芯片表面平整、光滑，解决了湿法刻蚀难以解决的横向腐蚀问题，并提高了刻蚀速率。

英文摘要：

By combining the theory and experiment of plasma etching, ion etching technology of non-drive MEMS gyroscope of silicon chip has been studied. Experiments show that： the uniformity of etching depth of 55 μm silicon is 0. 63%. Selection ratio is 90： 1. The etching rate is 7.25 μm/min. The verticality is 90°± 1 °. By applying this technology, the etched chip is fiat and smooth, which has solved the difficulty of lateral corrosion for wet etching and improved the etching rate.