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Fabrication of p-type ZnSe:Sb nanowires for high-performance ultraviolet light photodetector applica
ISSN号:0957-4484
期刊名称:Nanotechnology
时间:2013.3.8
页码:-
相关项目:基于Si/II-VI族半导体异质结波长可调纳米发光器件的研究
作者:
Nie, Biao|Luo, Lin-Bao|Chen, Jing-Jing|Hu, Ji-Gang|Wu, Chun-Yan|Wang, Li|Yu, Yong-Qiang|Zhu, Zhi-Feng|Jie, Jian-Sheng|
同期刊论文项目
基于Si/II-VI族半导体异质结波长可调纳米发光器件的研究
期刊论文 25
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Surface Dangling Bond-Mediated Molecules Doping of Germanium Nanowires
Transparent and flexible selenium nanobelt-based visible light photodetector
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Doping dependent crystal structures and optoelectronic properties of n-type CdSe:Ga nanowries