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Recent Advances to Understand Morphology Stability of Organic Photovoltaics
  • ISSN号:1000-9825
  • 期刊名称:《软件学报》
  • 时间:0
  • 分类:TM914.4[电气工程—电力电子与电力传动]
  • 作者机构:Institute of Advanced Materials (INAM), Universitat Jaume I
  • 相关基金:supported by FP7 European collaborative project SUNFLOWER (FP7-ICT-2011-7contract No. 287594);the Spanish Ministerio de Economía y Competitividad (project MAT2013-47192-C3-1-R);Generalitat Valenciana (project ISIC/2012/008 Institute of Nanotechnologies for Clean Energies);the Spanish Ministerio de Economía y Competitividad for a Ramón y Cajal Fellowship (RYC2014-16809)
中文摘要:

Organic photovoltaic devices are on the verge of commercialization with power conversion efficiencies exceeding 10 % in laboratory cells and above 8.5 % in modules. However, one of the main limitations hindering their mass scale production is the debatable inferior stability of organic photovoltaic devices in comparison to other technologies.Adequate donor/acceptor morphology of the active layer is required to provide carrier separation and transport to the electrodes. Unfortunately, the beneficial morphology for device performance is usually a kinetically frozen state which has not reached thermodynamic equilibrium. During the last 5 years, special efforts have been dedicated to isolate the effects related to morphology changes taking place within the active layer and compare to those affecting the interfaces with the external electrodes. The current review discusses some of the factors affecting the donor/acceptor morphology evolution as one of the major intrinsic degradation pathways. Special attention is paid to factors in the nano- and microscale domain.For example, phase segregation of the polymer and fullerene domains due to Ostwald ripening is a major factor in the microscale domain and is affected by the presence of additives, glass transition temperature of the polymers or use of crosslinkers in the active layer. Alternatively, the role of vertical segregation profile toward the external electrodes is key for device operation, being a clear case of nanoscale morphology evolution. For example, donor and acceptor molecules actually present at the external interfaces will determine the leakage current of the device, energy-level alignment, and interfacial recombination processes. Different techniques have been developed over the last few years to understand its relationship with the device efficiency. Of special interest are those techniques which enable in situ analysis being nondestructive as they can be used to study accelerated degradation experiments and some will be discussed here.

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期刊信息
  • 《软件学报》
  • 北大核心期刊(2011版)
  • 主管单位:中国科学院
  • 主办单位:中国科学院软件研究所 中国计算机学会
  • 主编:赵琛
  • 地址:北京8718信箱中国科学院软件研究所
  • 邮编:100190
  • 邮箱:jos@iscas.ac.cn
  • 电话:010-62562563
  • 国际标准刊号:ISSN:1000-9825
  • 国内统一刊号:ISSN:11-2560/TP
  • 邮发代号:82-367
  • 获奖情况:
  • 2001年入选中国期刊方阵“双百期刊”,2000年荣获中国科学院优秀科技期刊一等奖
  • 国内外数据库收录:
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  • 被引量:54609