中文摘要：

二维的转变金属 dichalcogenides (TMD ) 的电的表演被结构的缺点的数字强烈影响。在这个工作，我们提供一条光分光镜的描述途径相关结构的缺点的数字和 WSe ₂ 设备的电的表演。electron-beam-lithographyprocessed WSe ₂ 的低温度的光致发光(PL ) 系列由于缺点一定的激子展出清楚的导致缺点的 PL 排出物，它将强烈降级电的表演。由采用一种 electron-beam-free 转移电极技术，我们成功地准备了包含缺点的有限数量的一台 backgated WSe ₂ 设备。约 200 厘米 ² 的最大的洞活动性

英文摘要：

The electrical performance of two-dimensional transition metal dichalcogenides （TMDs） is strongly affected by the number of structural defects. In this work, we provide an optical spectroscopic characterization approach to correlate the number of structural defects and the electrical performance of WSe2 devices. Low-temperature photoluminescence （PL） spectra of electron-beam-lithography- processed WSe2 exhibit a clear defect-induced PL emission due to excitons bound to defects, which would strongly degrade the electrical performance. By adopting an electron-beam-free transfer-electrode technique, we successfully prepared a backgated WSe2 device containing a limited amount of defects. A maximum hole mobility of approximately 200 cm2.V -1.s-1 was achieved because of the reduced scattering sources, which is the highest reported value for this type of device. This work provides not only a versatile and nondestructive method to monitor the defects in TMDs but also a new route to approach the room-temperature phonon-limited mobility in high-performance TMD devices.