中文摘要：

晶体材料的合成中,通过特定掺杂可以提高晶体质量、改善晶体性能,而掺杂元素的种类、浓度和分布对于人工晶体结构、性能等也有非常重要的影响。因此,准确测定晶体中各种元素的含量,对于改进晶体材料配方、生长工艺以及质量控制具有重要指导意义。目前,人工晶体中掺杂元素表征的主要方法包括原子光谱法,X射线荧光光谱法,无机质谱法和电子探针显微分析法等,对各种方法的原理、特点与局限性进行了综合论述,由于每种方法都有其各自的优缺点和适用范围,可根据不同的分析需求选择合适的方法以提高分析的效率与准确性。对人工晶体中掺杂元素分析方法的发展趋势进行了展望。

英文摘要：

During the synthesis of crystal material,specific dopant can enhance the qualities and performance of crystals,while the types,concentrations and distributions of doping elements also have significant influence on the structures and properties of artificial crystals.Hence,it is very important to determine the concentrations of doping elements for further improving the crystal material formulas,crystal growth process,andits quality control.Currently,the analysis techniques for doping elements＇ characterization include atomic spectrometry,X-ray fluorescence spectrometry,inorganic mass spectrometry,electron probe microanalysis,etc.The principles,advantages and disadvantages of these techniques are discussed in this paper.Considering the specialties and scope of application,it is necessary to choose the suitable methods to improve the efficiency and accuracy.Meanwhile,the developing trends of analysis methods for doping elements are also prospected.