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GaAs纳米线及GaAs/InxGa1-xAs/GaAs纳米线径向异质结构的无催化选区生长的实验研究
  • ISSN号：1000-3290
  • 期刊名称：《物理学报》
  • 时间：0
  • 分类：TN304.23[电子电信—物理电子学]
  • 作者机构：[1]北京邮电大学,信息光子学与光通信国家重点实验室,北京100876
  • 相关基金：国家重点基础研究发展计划（973计划）（批准号：2010CB327600）、国家自然科学基金（批准号：61020106007,61211120195,61077049和61376019）、北京市自然科学基金（批准号：4142038）、高等学校博士学科点专项科研基金（批准号：20120005110011）和“111”基地计划（批准号：B07005）资助的课题.
作者： 崔建功[1], 张霞[1], 颜鑫[1], 李军帅[1], 黄永清[1], 任晓敏[1]
关键词： GaAs纳米线, 无催化选区生长, 金属有机化学气相沉积法, GaAs nanowires, no catalyst selective-area growth, metal organic chemical vapor deposition（MOCVD）
中文摘要：

利用无催化选区金属有机化学气相沉积（SA-MOCVD）法在GaAs（111）B衬底上分别制备了GaAs纳米线和GaAs/InxGa1-xAs/GaAs纳米线径向异质结构.系统地研究了生长条件对GaAs纳米线生长的影响.实验结果显示， GaAs纳米线的形貌和长度依赖于生长温度、AsH3的分压以及SiO2掩膜表面的圆孔直径.因此可以通过调节以上因素来得到高质量的GaAs纳米线.并且发现扩散是影响无催化选区生长GaAs纳米线的主要机理.微区光致发光谱（μ-PL）表明， GaAs/InxGa1-xAs/GaAs纳米线径向异质结构被成功合成，室温（300 K）下它的发光波长为913 nm.这些结果对于GaAs纳米线及其异质结构制备的进一步研究及其在光电子器件中的应用具有很好的参考价值.

英文摘要：

We have investigated the catalyst-free selective-area growth of GaAs and GaAs/InxGa1？xAs/GaAs （0 〈 x 〈 1） radial heterostructure nanowires on GaAs（111）B substrate by MOCVD. Our results show that the selective-area growth of GaAs nanowires is strongly dependent on growth conditions, such as the growth temperature and the pressure of AsH3. GaAs nanowire length would become longer by reducing the mask opening size. Thus we can form the GaAs nanowire uniform arrays with appropriate length and width by controling growth conditions and mask opening size. Then the photoluminescence measurement of GaAs/InxGa1-xAs/GaAs （0〈;x〈1） core-shell nanowires is carried out.

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期刊信息
  • 《物理学报》
  • 北大核心期刊（2011版）
  • 主管单位:中国科学院
  • 主办单位:中国物理学会 中国科学院物理研究所
  • 主编：欧阳钟灿
  • 地址：北京603信箱(中国科学院物理研究所)
  • 邮编：100190
  • 邮箱：apsoffice@iphy.ac.cn
  • 电话：010-82649026
  • 国际标准刊号：ISSN：1000-3290
  • 国内统一刊号：ISSN：11-1958/O4
  • 邮发代号:2-425
  • 获奖情况:
  • 1999年首届国家期刊奖,2000年中科院优秀期刊特等奖,2001年科技期刊最高方阵队双高期刊居中国期刊第12位
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  • 被引量:49876