表面织构是一种通过有效的光俘获增加短路电流从而提高太阳电池效率的主要途径之一.在加入间隙式超声和NaClO添加剂的碱性四甲基氢氧化铵(TMAH)溶液中对单晶硅表面进行织构化处理,研究超声与NaClO在织构过程中对金字塔成核和生长的影响,以及金字塔大小对高温工艺之后的单晶硅少子寿命的影响.研究表明,通过在织构溶液中加入间隙式超声控制气泡停留在硅片表面的时间和脱离硅片表面速度,增强了小尺寸金字塔的均匀分布.织构之后硅片在AM1.5G光谱下的加权平均反射率能够达到12.4%,在高温扩散和氧化之后少子寿命的大小与金字塔大小之间存在近似于指数衰减函数的关系.
Texturing of silicon surface is a major way to increase short circuit current and then improve the efficiency of silicon solar cells by effective light trapping. The anisotropic texturing of a (100) silicon surface was performed using tetramethyl ammonium hydroxide (TMAH) solution and NaClO additive in combination with continual ultrasonic wave treatment. The effect of ultrasonic wave and NaClO on the nucleation and growth of finc pyramids during the anisotropic texturing,and the effect of size of pyramids on the minority carrier lifetime of textured silicon wafer after the high temperature process were investigated. The enhancement of homogeneity of the smaller pyramids in the textured structure of silicon crystalline is obtained by adding continnal ultrasonic wave treatment to control the time of H2 bubble staying on the silicon surface and the speed of H2 detaching from the surface. The weighted mean reflectance for the solar spectrum AM 1. 5G is 12. 4% for the silicon surface with the optimal size of pyramids. After high temperature oxidation,the size of pyramid has an obvious exponential relation with the minority carrier lifetime of textured silicon wafer.