中文摘要：

采用传输矩阵方法分析极化诱导的内建电场对Mnδ掺杂的GaN／AlxGa1-xN量子阱居里温度（Tc）的调制作用．通过解薛定谔方程计算出在不同的内建电场条件下半导体量子阱局域态内的基态空穴能级和波函数分布情况。并在此基础上确定量子阱内Mnδ掺杂情况下Tc随内建电场的变化趋势，分析了不同量子阱结构引起的内建电场分布变化及其对Tc的影响．在耦合双量子阱中通过调节左右阱的不对称性可以得到Tc近3倍的增长．

英文摘要：

Transfer matrix method has been used to analyze Curie-temperature （Tc ） modulation by polarization-induced built-in electric fields in Mn δ-doped GaN/AlGaN quantum wells. Schrodinger equation is employed to calculate the quantum-confined subband energies and the distribution of their corresponding envelope fuctions. Based on these, we investigate the dependence of Tc on the built-in electric fields in different structures of quantum well. By changing the asymmetry of double quantum wells （DQW）, Tc can be raised up to 3 times.