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Schottky barrier characteristics of ternary silicide Co1-xNixSi2 on n-Si(100) contacts formed by sol
  • 期刊名称：Solid State Electron
  • 时间：0
  • 页码：48, 1205-1209 (2004).
  • 语言：英文
  • 相关项目：多层薄膜固相反应与Co-Ni系硅化物薄膜外延及应用研究
作者： 竺士炀|R. L. Van Meirhaeghe|S. Forment等|
同期刊论文项目
多层薄膜固相反应与Co-Ni系硅化物薄膜外延及应用研究
期刊论文 15 会议论文 3
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