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中文摘要：
采用磁控溅射法在Pt/Ti/Si O2/Si基底上制备立方焦绿石结构Bi1.5Mg1.0Nb1.5O7薄膜。通过控制750℃下后退火时间来控制薄膜的平均晶粒尺寸,用沉积时间控制膜厚。研究不同晶粒尺寸和膜厚对BMN薄膜相结构、微观形貌和介电性能的影响。结果表明,当BMN薄膜平均晶粒尺寸为45 nm、膜厚为430 nm时,薄膜介电性能提高显著,1 MHz下介电常数为112.4,介电损耗为0.001 82,在0.93 MV/cm外加电场条件下,介电调谐率为27.7%。
英文摘要：
Bi1.5MgNb1.5O7 （BMN） thin films with a cubic pyrochlore structure were prepared on Pt/Ti/SiO2/Si substrates via radio-frequency （RF） magnetron sputter deposition. The grain size and thickness of the thin films were controlled via the change of post-annealing time at 750℃ and the sputtering time, respectively. The effects of grain size and film thickness on the phase compositions, microstructures and dielectric properties of BMN thin films were investigated. As the average grain size and thickness of BMN thin films increase to 45 nm and 430 nm, respectively, the dielectric properties of the thin films improve, and the resultant films have a dielectric constant of 112.4, a low dielectric loss of 0.001 82 at 1 MHz, and a maximum tunability of 27.7% at the bias electric field of 0.93 MV/cm. These results indicate that the BMN thin films could be used as a promising material for tunable device applications due to their high tunability at low bias fields.
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