中文摘要：

<正>We report high performance InAlN/GaN HEMTs grown on sapphire substrates.The lattice-matched InAlN/GaN HEMT sample showed a high 2DEG mobility of 1210 cm2/（V·s） under a sheet density of 2.6×1013 cm-2.Large signal load-pull measurements for a（2×100μm）×0.25μm device have been conducted with a drain voltage of 24 V at 10 GHz.The presented results confirm the high performances reachable by InAlN-based technology with an output power density of 4.69 W/mm,a linear gain of 11.8 dB and a peak power-added efficiency of 48%.This is the first report of high performance InAlN/GaN HEMTs in mainland China.

英文摘要：

We report high performance InA1N/GaN HEMTs grown on sapphire substrates. The lattice-matched InA1N/GaN HEMT sample showed a high 2DEG mobility of 1210 cmZ/（V.s） under a sheet density of 2.6 × 10^13 cm^-2. Large signal load-pull measurements for a （2 × 100 μm） x 0.25 μm device have been conducted with a drain voltage of 24 V at 10 GHz. The presented results confirm the high performances reachable by InAIN- based technology with an output power density of 4.69 W/ram, a linear gain of 11.8 dB and a peak power-added efficiency of 48%. This is the first report of high performance InA1N/GaN HEMTs in mainland China.