中文摘要：

采用射频磁控溅射法,在不同的Ar∶O2条件下,以高掺磷n型Si衬底为磷掺杂源制备了p型ZnO薄膜和p-ZnO/n-Si异质结。对ZnO∶P薄膜进行了光致发光谱（PL）、霍尔参数、I-V特性、扫描电镜（SEM）和X射线衍射谱（XRD）等测试。结果表明,获得的ZnO∶P薄膜沿（0002）晶面高取向生长,以3.33 eV近带边紫外发光为主,伴有2.69 eV附近的深能级绿色发光峰,空穴浓度为8.982×1017/cm3,空穴迁移率为9.595 cm2/V.s,p-ZnO/n-Si异质结I-V整流特性明显,表明ZnO∶P薄膜具有p型导电特性。

英文摘要：

P-doped p-type ZnO（p-ZnO） thin films and p-ZnO/n-Si were prepared on high phosphorus-doped Si substrates as the phosphorus doping source by radio frequency（RF） magnetron sputtering in O2 and Ar mixed atmosphere.The optical-electric properties and structure of the films were characterized by photoluminescence spectrum（PL）,Hall effect,I-V characteristic,scanning electron microscopy（SEM） and X-ray diffraction（XRD） to study the optical-electric and structure properties.The XRD results show that the ZnO∶ P film obtained with a（0002） high orientation,the strong near band edge UV emission peak near 3.33 eV is observed in PL spectrum,and green light emission peaks are also obtained around 2.69 eV.The p-ZnO/n-Si heterojunction has good rectification character,and the corresponding hole concentration and hole mobility of the p-ZnO film is 8.982×1017 cm-3 and 9.595 cm2/V·s,respectively.This reveals that the ZnO∶ P film is really p-type behavior.