在Si基SiO2材料上设计并制作了中心波长为1.55μm、通道间隔为0.8nm的8×8阵列波导光栅(AWG)。详细介绍了器件的设计、制作和测试,并对测试结果及工艺误差进行了深入的分析讨论。封装后的测试结果显示,器件的3dB带宽为0.22nm;中央通道输入时,最小和最大插入损耗分别为4.01dB和6.32dB;边缘通道输入时,最小和最大插入损耗分别为6.24dB和9.02dB;对比不同通道输入时输出通道的中心波长,其偏移量低于0.039nm;器件的通道间串扰小于-25dB;偏振依赖损耗(PDL)小于0.3dB。
An 8× 8 silica-based arrayed waveguide grating(AWG) with the central wavelength of 1.55 μm and the channel spacing of 0.8 nm is designed and fabricated. The design,fabrication and test process are presented in details. According to the test results of the packaged chip,the 3 dB bandwidth of the device is 0.22 nm, the minimum and maximum channel loss are 4.01 dB and 6.32 dB,respectively,when the central input channel is used,while the corresponding values for the outermost input channel are 6.24 dB and 9.02 dB, respectively. The output wavelength shift is below 0. 039 nm. The crosstalk of the device is better than -25 dB.And the PDL ofthe device is less than 0.3 dB.