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Strain modulation on graphene/ZnO nanowire mixed- dimensional van der Waals heterostructure for high- performance photosensor
  • ISSN号:1674-7062
  • 期刊名称:《科学技术哲学研究》
  • 时间:0
  • 分类:TN141[电子电信—物理电子学] TN818.06[电子电信—信息与通信工程]
  • 作者机构:[1]State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China, [2]Beijing Municipal Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing 100083, China
  • 相关基金:Acknowledgements This work was supported by the National Basic Research Program of China (No. 2013CB932602), the National Key Research and Development Program of China (No. 2016YFA0202701), the Program of Introducing Talents of Discipline to Universities (No. B14003), National Natural Science Foundation of China (Nos. 51672026, 51602020, 51527802, and 51232001), China Postdoctoral Science Foundation (Nos. 2015M580981 and 2016T90033), Beijing Municipal Science & Technology Commission, and the State Key Laboratory for Advanced Metals and Materials (No. 2016Z-06), and the Fundamental Research Funds for the Central Universities (Nos. FRF-TP-15-075A1, FRF-BR-15-036A, and FRF-AS-15-002).
中文摘要:

因为它在紧张下面避免契约破裂和原子重建,混合维的货车 der Waals (vdW ) heterostructure 是为拉紧的电子学和光电子的一块有希望的积木。我们为高效的 photosensing 建议在二维的 graphene 和一个维的 ZnO nanowire 之间的新奇混合维的 vdW heterostructure。由利用 ZnO 的压电的性质,紧张调整在混合维的 vdW heterostructure 被完成优化设备表演。由联合超离频在 graphene 的电子转移速度并且极其在 ZnO 的洞的长寿时间, 1.87 ? 的突出的 responsivity??

英文摘要:

The mixed-dimensional van der Waals (vdW) heterostructure is a promising building block for strained electronics and optoelectronics because it avoids the bond fracture and atomic reconstruction under strain. We propose a novel mixed-dimensional vdW heterostructure between two-dimensional graphene and a one-dimensional ZnO nanowire for high-performance photosensing. By utilizing the piezoelectric properties of ZnO, strain modulation was accomplished in the mixed-dimensional vdW heterostructure to optimize the device performance. By combining the ultrahigh electrons transfer speed in graphene and the extremely long life time of holes in ZnO, an outstanding responsivity of 1.87 ×10^5 A/W was achieved. Under a tensile strain of only 0.44% on the ZnO nanowire, the responsivity was enhanced by 26%. A competitive model was proposed, in which the performance enhancement is due to the efficient promotion of the injection of photogenerated electrons from the ZnO into the graphene caused by the strain-induced positive piezopotential. Our study provides a strain-engineering strategy for controlling the behavior of the photocarriers in the mixed-dimensional vdW heterostructure, which can be also applied to other similar systems in the future.

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期刊信息
  • 《科学技术哲学研究》
  • 北大核心期刊(2011版)
  • 主管单位:山西省科学技术协会
  • 主办单位:山西山西大学 山西省自然辩证法研究会
  • 主编:郭贵春
  • 地址:山西省太原市坞城路92号
  • 邮编:030006
  • 邮箱:bianjibu@sxu.edu.cn
  • 电话:0351-7011922
  • 国际标准刊号:ISSN:1674-7062
  • 国内统一刊号:ISSN:14-1354/G3
  • 邮发代号:22-25
  • 获奖情况:
  • 国内外数据库收录:
  • 中国中国人文社科核心期刊,中国北大核心期刊(2011版),中国北大核心期刊(2014版),中国国家哲学社会科学学术期刊数据库
  • 被引量:950