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中文摘要：
用脉冲激光沉积法在LaAlO3衬底上制备了La0.88Te0.12MnO3-δ（LTeMnO）薄膜。X射线衍射分析表明,薄膜具有钙钛矿赝立方结构,且沿（012）方向择优生长;电阻率-温度关系显示样品发生了金属绝缘体转变和庞磁电阻效应,转变温度为278K;在0.4T的磁场下,其磁电阻最大值为16.9%,对应的温度为223K。在绿激光作用下,光致电阻率变化最大值为13.2%;原因可能是激光作用影响了体系中载流子的浓度,进而影响了体系的自旋。
英文摘要：
La0.88 Te0.12 MnO3-δ thin film has been prepared on LaAlO3 （LAO） substrates by pulsed laser deposition method, the photoinduced resistivity change and clossal magnetoresistance effect have been investigated. The results show that the film has a metal-insulator transition temperature TMI of 278K and the maximum magnetoresistance ratio of 16.9% at 0.4T. Under laser irradiation, the resistivity increase below TMI, but there is a decrease above TMI. The maximum relative change in resistivity （LR %） is 13.2%. Since the laser photon energy is larger than the band gap of the thin films, electron-hole pairs are created in the film. For the electrons can be captured by the oxygen vacancy easily, then extra holes carriers are produced, which can induce local insulator-metal phase change and photo-induced effect.
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