采用恒电流沉积方法,在多孔阳极氧化铝(AAO)模板中制备出了具有单晶结构的Ni纳米线阵列.采用扫描电子显微镜(SEM)、透射电子显微镜(TEM)和X射线衍射(XRD)技术对制备的Ni纳米线阵列的形貌及结构进行了表征、利用振动样品磁强计(VSM)对单晶Ni纳米线阵列的磁性能进行了研究.结果表明,单晶镍纳米线阵列的易磁化方向为纳米线轴向,并且与多晶纳米线相比显示出了更高的矫顽力.直径为30nm的纳米线具有较高的矫顽力(8.236×10^4A/m)和较高的剩磁比(Mr=0.94M。).
Single-crystal Ni nanowire arrays were prepared by employing the porous AAO template by using the electrodeposition technique at a constant current of 2.0 mA/cm^2. The morphology and microstructure of Ni nanowire arrays were studied by SEM, TEM and XRD techniques. The magnetic properties of the single-crystal Ni nanowire arrays were investigated by VSM. The results reveal that the single-crystal Ni nanowire arrays show a perpendicular magnetic anistory and have a preferential magnetic orientation along the wire axis. The magnetic properties of the single-crystal Ni nanowire arrays are better than those of polycrystal nanowire arrays.