中文摘要：

通过溅射的方法制作了Pt／AIGaN／GaN背对背肖特基二极管并测试了该器件对氢气的响应．研究了Pt／AlGaN／GaN背对背肖特基二极管在25和100℃时对于10％H2（N2气中）的响应，计算了器件的灵敏度；并比较了两种温度条件下器件对于氢气响应的快慢；空气中的氧气对于器件电流的恢复有重要的作用；最后由热电子发射公式计算了器件在通人10％的氢气前后有效势垒高度的变化．

英文摘要：

Hydrogen sensors based on A1GaN/GaN back-to-back Schottky diodes have been produced. Platinum is sputtered on the surface of the sample. The response of the device to 10% H2 in N2 is measured at 25--100℃. The oxygen in the air has great influ- ence on the current of the device. Finally,the variation of the Schottky barrier height induced by the hydrogen is calculated.