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相变存储材料Ge_1Sb_2Te_4和Ge_2Sb_2Te_5薄膜的结构和电学特性研究
  • 期刊名称：物理学报
  • 时间：0
  • 页码：6563-6568
  • 语言：中文
  • 相关项目：氧化物半导体量子点稀土共掺杂硅基发光材料及其共振能量转移过程研究
作者： 徐骏|刘文强|杨菲|徐岭|廖远宝|刘东|马忠元|陈坤基|
同期刊论文项目
氧化物半导体量子点稀土共掺杂硅基发光材料及其共振能量转移过程研究
期刊论文 22 会议论文 6 专利 4
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相变存储材料Ge1Sb2Te4和Ge2Sb2Te5薄膜的结构和电学特性研究