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拓扑绝缘体薄膜和有限尺寸效应
  • ISSN号：0379-4148
  • 期刊名称：物理
  • 时间：2011
  • 页码：434-439
  • 分类：O189.11[理学—数学;理学—基础数学]
  • 作者机构：[1]中国科学院物理研究所表面物理国家重点实验室,北京100190, [2]清华大学物理系低维量子物理国家重点实验室,北京100084
  • 相关基金：国家自然科学基金（批准号：21025314;10974231）; 国家重点基础研究发展计划（批准号：2009CB929400）资助项目
  • 相关项目：低维体系中的新奇量子现象
作者： 张翼|何珂|马旭村|薛其坤|
关键词： 拓扑绝缘体, Bi2Se3, 分子束外延, 角分辨光电子能谱, 扫描隧道显微镜, topological insulator, Bi2Se3, molecular beam epitaxy, angle／｜resolved photoemission spectroscopy, scanning tunneling microscopy
中文摘要：

拓扑绝缘体是近年来发现的一类新的量子材料,已成为凝聚态物理的研究热点领域.厚度仅几纳米的拓扑绝缘体薄膜不但具有奇特的物理性质,而且还是拓扑绝缘体应用于平面器件的基础.文章以Bi2Se3为例,介绍了Bi2Se3家族拓扑绝缘体薄膜的分子束外延生长以及其能带、自旋结构和拓扑性质随层厚的演化.这些结果为人工调控拓扑绝缘体的电子结构和物理性质提供了指导.

英文摘要：

Topological insulators （TIs） are a new class of quantum matter which have attracted extensive interest recently. Nanometer thick TI thin films not only exhibit novel physical properties but also are useful for developing TI／｜based planar devices. Taking Bi2Se3 as an example, we report the molecular beam epitaxy growth of the Bi2Se3 family of TI thin films and the thickness dependent behavior of their band and spin structures and topological characteristics. The results provide information on the artificial control of the electronic structures and physical properties of TIs.

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期刊信息
  • 《物理》
  • 北大核心期刊（2011版）
  • 主管单位:中国科学院
  • 主办单位:中国物理学会 中国科学院物理研究所
  • 主编：朱星
  • 地址：北京603信箱
  • 邮编：100190
  • 邮箱：physics@aphy.iphy.ac.cn
  • 电话：010-82649470 82649266
  • 国际标准刊号：ISSN：0379-4148
  • 国内统一刊号：ISSN：11-1957/O4
  • 邮发代号:2-805
  • 获奖情况:
  • 2002年中国科协优秀期刊三等奖,2000年度中科院优秀期刊一等奖,2001年入选“中国期刊方阵”,中国期刊方阵“双效”期刊
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  • 被引量:8902