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Enhancement of Resistive Switching Characteristics in Al(2)O(3)-Based RRAM With Embedded Ruthenium N
  • ISSN号：0741-3106
  • 期刊名称：IEEE Electron Device Letters
  • 时间：2011.6.6
  • 页码：794-796
  • 相关项目：碳基电路中的纳米尺度阻式存储稳定实现及物理机制
作者： Chen, Lin|Gou, Hong-Yan|Sun, Qing-Qing|Zhou, Peng|Lu, Hong-Liang|Wang, Peng-Fei|Ding, Shi-Jin|Zhang, DavidWei|
同期刊论文项目
碳基电路中的纳米尺度阻式存储稳定实现及物理机制
期刊论文 18 会议论文 1
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