位置：成果数据库 > 期刊 > 期刊详情页
Influence of the incident laser pulse energy on jitter time of GaAs photoconductiv
  • ISSN号：1539-4794
  • 期刊名称：OPTICS LETTERS
  • 时间：2013
  • 页码：4339-4341
  • 相关项目：光子作用下砷化镓光电导开关沿面闪络机理及其抑制方法研究
作者： Wei SHi, et al|
同期刊论文项目
光子作用下砷化镓光电导开关沿面闪络机理及其抑制方法研究
期刊论文 12 会议论文 1 获奖 6
同项目期刊论文
Terahertz generation and detection with InGaAs-based large-area photoconductive devices excited at 1
Mechanism Analysis of the Flashover Quenching the Photoconductive Semiconductor Switch in SF6
Research on the Failure Mechanism of High-Power&nbsp;GaAs PCSS<br />
Impact of Current Filaments on the Material&nbsp;and Output Characteristics of GaAs&nbsp;Pho
Effects of trigger laser pulse width on the jitter time of GaAs photoconductive semiconductor switch
<span>Research on Flashover Characteristics and the </span><span>Physical Mechanis
Accurate measurement of the jitter time of GaAs photoconductive semiconductor switches triggered by
Experimental Research on Inhibition of Surface Flashover Based on High Power Gallium Arsenide Photoconductive Switches Triggered by Laser