中文摘要：

研究了在可见光诱导条件下的近化学计量比掺镁铌酸锂的反转电压与光强之间的关系,并实现了利用可见光对晶体畴反转进行可控操作和实时监测．发现晶体的反转电压随光强增大而下降，最大降幅达到70％左右．探寻了可见光诱导铌酸锂晶体畴反转的形成机制，认为光诱导晶体畴反转的主要原因是光激载流子迁移改变了晶体内部的局域电场，造成了晶体极化反转电压的降低。

英文摘要：

The relation of light intensity and the domain switching voltage of the near- stoichiometric Mg-doped lithium niobate was studied. We found that the visible light-induced switching voltage decreases about 70 % at maximum with intensity increasing. We realized controllable operation and in-situ visualization in the process of the visible light-induce domain switching. We studied the mechanism of the visible light-induced domain switching in the lithium niobate crystals, and considered that the main factor is the movement of light-induced carrier, which modified the local electric field in the crystals and then resulted in the reduction of the domain switching voltage.