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中文摘要：
通过混合物理化学沉积法（hybrid physical-chemical vapor deposition,简称为HPCVD）,我们在多种单晶衬底上制备出了MgB2超导薄膜.经测量发现MgB2薄膜在6H-SiC、c-Al2O3、MgO（111）和YSZ（111）衬底上基本是沿c轴外延生长的,形成单晶薄膜;在MgO（211）、MgO（100）和钇稳定氧化锆（YSZ）（110）衬底上,MgB2晶粒的生长表现出明显的择优取向生长方式,并与晶格常数匹配关系所预言的结果一致。
英文摘要：
Via hybrid physical-chemical vapor deposition technique,we obtain clean MgB2 films on various substrates.On 6H-SiC,c-Al2O3,MgO（111）and YSZ（111）,c-oriented epitaxial films are observed.While on MgO（211）,MgO（100）,yttrium-stabilized ZrO2,and YSZ（110）,the films showed vivid off-epitaxial growth.By analyzing lattice constants of MgB2 and substrates,relationship between the thin films＇ orientation and the substrates＇ lattice constants is found.
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