中文摘要：

运用X射线衍射（XRD）和X射线光电子能谱（XPS）对垂直布里奇曼法生长的ZnGeP2晶体的轴向组成进行分析,发现晶体的成分不均匀。采用Rietveld全谱拟合精修定量分析各物相的相对含量,发现晶体轴向组成分布存在较大差异。晶体肩部和尾部含有Ge和Zn3P2杂相,而主体部分为单相ZnGeP2、质量相对较高。傅里叶变换红外光谱（FTIR）的测试结果表明,晶体轴向成分的差异对其红外透过率有较大影响。经过适当的热处理工艺,可以提高晶体的均匀性,改善其光学性能。

英文摘要：

Phase composition of ZnGeP2 crystals grown by vertical Bridgman method analysis was carried out using X-ray diffraction（XRD） and X-ray photoelectron spectroscopy（XPS） along the growth direction.The results indicated that composition of the crystal was inhomogeneity.Whole pattern fitting refinement by Rietveld method was used,and then the relative contents of each phase were calculated by quantitative analysis.It was found that there was obvious difference in the chemical composition in the growth direction.There were impurities Ge and Zn3P2 in the shoulder and tail parts of the grown crystal,while the main part is single crystal ZnGeP2 and the quality is high.The test results of Fourier transform infrared spectroscopy（FTIR） confirmed that the difference in the composition had a serious influence on the infrared transmittance of the crystal.The homogeneity and optical properties of the crystal could be improved by appropriate heat treatment.