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SiC Formation Through Interface Reaction between C60 and Si in Plasma Environment
  • ISSN号：1009-0630
  • 期刊名称：《等离子体科学与技术：英文版》
  • 时间：0
  • 分类：TN304.24[电子电信—物理电子学] TN304.055[电子电信—物理电子学]
  • 作者机构：[1]CAS Key Laboratory of Basic Plasma Physics, Department of Modern Physics,University of Science and Technology of China, Hefei 230026, China
  • 相关基金：supported by the National Natural Science Foundation of China （Nos. 50472010 10635010）
作者： 丁芳[1], 孟亮[1], 朱晓东[1]
关键词： 碳化硅形成, C60, SI, 界面反应, 等离子体, 化学汽相沉积, SiC, interface reaction, C60 plasma
中文摘要：

E-mail address of ZHU Xiaodong： xdzhu@ustc.edu.cn

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期刊信息
  • 《等离子体科学与技术：英文版》
  • 主管单位:中国科学院 中国科协
  • 主办单位:中国科学院等离子体物理研究所 中国力学学会
  • 主编：万元熙、谢纪康
  • 地址：合肥市1126信箱
  • 邮编：230031
  • 邮箱：pst@ipp.ac.cn
  • 电话：0551-5591617 5591388
  • 国际标准刊号：ISSN：1009-0630
  • 国内统一刊号：ISSN：34-1187/TL
  • 邮发代号:
  • 获奖情况:
  • 国内外数据库收录:
  • 美国化学文摘（网络版）,荷兰文摘与引文数据库,美国工程索引,美国剑桥科学文摘,美国科学引文索引（扩展库）,英国科学文摘数据库
  • 被引量:89