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Investigation of Al doping on Ge55Te45 for phase change memory application
  • ISSN号：0021-8979
  • 期刊名称：JOURNAL OF APPLIED PHYSICS
  • 时间：2013.6.6
  • 页码：1-3
  • 相关项目：Si基新型相变材料（Si-Sb-Te）及其器件基础研究
作者： Ren, Kun|Rao, Feng|Song, Zhitang|Wu, Liangcai|Xia, Mengjiao|Liu, Bo|Feng, Songlin|
同期刊论文项目
Si基新型相变材料（Si-Sb-Te）及其器件基础研究
期刊论文 39
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