中文摘要：

采用Stille缩聚反应,合成了3,5-二烷基-二噻吩并[3,2-b：2＇,3＇-d]氧膦杂环戊二烯与二联噻吩的共聚物P1和P2,系统研究了它们的热性能、电化学性质和光物理性质.结果表明,这2个聚合物具有良好的热稳定性,热分解温度均大于400℃;薄膜的最大吸收峰位于590 nm,光学带隙为1.76 eV.将P1和P2作为活性层制备了薄膜晶体管和体异质结太阳能电池,发现带有较长烷基链的P2的器件性能较好.在底栅、顶接触结构的薄膜晶体管中,P2的空穴迁移率最高达到0.0077 cm2V-1s-1;在AM 1.5 G 100 mW/cm2光照条件下,P2的光伏电池的开路电压为0.68 V,短路电流为7.9 mA/cm2,填充因子为52%,能量转换效率为2.8%.

英文摘要：

In order to modulate the optoelectronic properties of thiophene-based conjugated polymers, two novel conjugated polymers （ P1 and P2） comprising dithieno [ 3,2-b ： 2＇, 3＇-d ] phosphole oxides （DTPhos） and 2, 2＇-bithiophene have been designed and synthesized by Stille polycondensation, and their thermal, electrochemical and photophysical properties were studied. Both polymers are thermally stable with decomposition temperature above 400 ~C , and exhibit the absorption maxima of ca. 590 nm and the optical band gap of 1.76 eV. The incorporation of DTPhos units into polythiophene backbone results in a 0. 15 eV reduction of optical bandgap. HOMO and LUMO energy levels of the polymers as measured by cyclic voltammetry are - 5.1 and - 2.9 eV,respectively. Thin-film transistors （TFT） and bulk heterojunetion solar cells （BHJ-SC） were fabricated based on P1 and P2. The performance of the devices increased with an increase of the alkyl chain length in the DTPhos units. With a bottom gate and top contact TFT device structure,P2 exhibited the hole mobility up to 0. 0077 cm2V 1s-1. Under AM 1.5 G illumination （ 100 roW/ cm2） ,BHJ-SC based on P2 displayed an open-circuit voltage of 0.68 V, a short-circuit current of 7.9 mA/ cm2 , a fill factor of 52% and a power conversion efficiency of 2. 8%. These results imply that DTPhos unit is a potential building block for high-performance polymer semiconductors.