中文摘要：

采用HSPICE对基于0.18μm工艺电流模单元进行了最优化分析.以S2I存储单元为例,进行了电路性能、参数扫描及蒙特卡洛分析,对基准电源CMOS模型参数设定进行了最优化处理.结果证明了该方法的有效性及电路可靠性.

英文摘要：

SI cell design used HSPICE are discussed in this paper.As an example,the sweep analysis on performance parameter of a S2I cell circuit are Implemented.Optimization processing of the structure and parameters are completed.And then the Monte Carlo method is using on the estimation of CMOS model parameter.The results prove the validity of this method and the reliability of the circuit.